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FDD2570
February 2001
FDD2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability.
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
150 20
(Note 1a)
Units
V V A W
4.7 30 70 3.2 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25C @ TA = 25C @ TA = 25C
(Note 1) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1b)
1.8 96
C/W C/W
Package Marking and Ordering Information
Device Marking FDD2570 Device FDD2570 Reel Size 13'' Tape width 16mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDD2570 Rev C(W)
FDD2570
Electrical Characteristics
Symbol
WDSS IAR
TA = 25C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VDD = 75 V, ID = 4.7 A
Min
Typ
Max Units
375 4.7 mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 120 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V 150 150 1 100 -100 V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 4.7 A ID = 4.5 A VGS = 6 V, VGS = 10 V, ID = 4.7 A, TJ = 125C VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 6.3 A
2
2.6 -7 60 63 120
4
V mV/C m
80 90 158
ID(on) gFS Ciss Coss Crss
30 20
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 75 V, f = 1.0 MHz
V GS = 0 V,
1907 117 33
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 75 V, VGS = 10 V,
ID = 1 A, RGEN = 6
12 7 41 21
19 14 65 34 62
ns ns ns ns nC nC nC
VDS = 75 V, VGS = 10 V
ID = 4.7 A,
39 7 9
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.7 A Voltage 2.7
(Note 2)
A V
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
b) RJA= 96oC/W on a minimum mounting pad.
FDD2570 Rev C(W)
FDD2570
Typical Characteristics
30 VGS = 10V 25 20 5.0V
1.6 VGS = 4.5V 1.4
4.5V 15 4.0V 10 1 5 3.5V 0 0 1 2 3 4 5 0.8 0 5 10 15 20 25 30 1.2 5.0V 10V
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.2
2.6 2.2 1.8 ID = 4.7 A VGS = 10 V
ID = 2.2 A 0.16 TA = 125 C
o
1.4 1 0.6 0.2 -50 -25 0 25 50 75 100
o
0.12
0.08
TA = 25 C
o
125
150
0.04 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
15 VDS = 10 V 12
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1 TA = 125 C
o
9 TA = 125 C 6 25 C -55 C 3
o o o
0.1 25 C 0.01 -55 C 0.001
o o
0 2 2.5 3 3.5 4 4.5
0.0001 0 0.2 0.4 0.6 0.8 1
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD2570 Rev C(W)
FDD2570
Typical Characteristics
10 ID = 4.7 A 8 75 6 VDS = 25 V 50 V
3000 2500 CISS 2000 1500 f = 1MHz VGS = 0 V
4 1000 CRSS 2 500 COSS 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 0 0 10 20 30 40 50 60 70 80 90 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s DC 0.1 VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.001 0.1 1 10 100 1000 0
o o
Figure 8. Capacitance Characteristics.
80
100us
SINGLE PULSE RJA = 96 C/W TA = 25C
60
1
40
20
0.01
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5 0.2
RJA(t) = r(t) + R JA R JA = 96 C/W
0.1
0.1 0.05 0.02
P(pk)
0.01
0.01
t1 t2 T J - T A = P * R JA(t) Duty Cycle, D = t1 / t2
SINGLE
0.001 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD2570 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

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